| PART |
Description |
Maker |
| UN4123 UNR4123 UN4121/4122/4123/4124/412X/412Y |
UN4121/4122/4123/4124/412X/412Y - PNP Transistor with built-in Resistor
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| SFH415 SFH415_6 SFH416-R Q62702-P1136 Q62702-P1137 |
GaAs-IR-Lumineszenzdioden GaAsInfrared Emitters
From old datasheet system
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q68000-A7851 IRL80A IRL80 |
GaAs-Infrarot-Sendediode GaAs Infrared Emitter
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CFA0103 CFA010306 CFA0103-L1 |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
Low Noise GaAs FETs
|
MIMIX BROADBAND INC
|
| FHX06X FHX04X FHX05X |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
GaAs FET & HEMT Chips
|
Eudyna Devices Inc
Fujitsu Media Devices Limited
|
| CF004_06 CF004 CF004-01 CF004-02 CF004-03 |
GaAs Pseudomorphic HEMT and MESFET Chips KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
Mimix Broadband, Inc.
MIMIX[Mimix Broadband]
|
| GN01096B |
GaAs device - GaAs MMICs - For Low noise Amplifier
|
Matsshita / Panasonic
|
| SBB-4089 SBB-4089Z |
0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier 0.05-6千兆赫，级联有源偏置的InGaP / GaAs HBT的MMIC放大
|
Electronic Theatre Controls, Inc.
http://
|
| OH004 OH10004OH004 |
GaAs device - GaAs Hall Devices
|
Matsshita / Panasonic
|
| SDK02 |
Sink Driver Array With Built-in Flywheel Diode
N-channel With built-in flywheel diode
|
SANKEN[Sanken electric]
|
| DTC143Z-AE3-R DTC143Z-AL3-R DTC143Z-AN3-R DTC144E- |
NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) npn型数字晶体管（内置电阻，
NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
|
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UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
